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SQM110N06-04L
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SPECIFICATIONS (T C = 25 °C, unless otherwise noted)
Vishay Siliconix
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
V DS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μA
V DS = V GS , I D = 250 μA
V DS = 0 V, V GS = ± 20 V
V GS = 0 V
V DS = 60 V
60
1.5
-
-
-
2.0
-
-
-
2.5
± 100
1
V
nA
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
V DS = 60 V, T J = 125 °C
-
-
50
μA
V GS = 0 V
V DS = 60 V, T J = 175 °C
-
-
350
On-State Drain Current a
I D(on)
V GS = 10 V
V DS ??? 5 V
120
-
-
A
V GS = 10 V
I D = 30 A
-
0.0028
0.0035
Drain-Source On-State Resistance a
R DS(on)
V GS = 10 V
V GS = 10 V
I D = 30 A, T J = 125 °C
I D = 30 A, T J = 175 °C
-
-
-
-
0.0060
0.0080
?
V GS = 4.5 V
I D = 20 A
-
0.004
0.0050
Forward
Transconductance b
g fs
V DS = 15 V, I D = 30 A
-
109
-
S
Dynamic b
Input Capacitance
C iss
-
7300
9125
Output Capacitance
C oss
V GS = 0 V
V DS = 25 V, f = 1 MHz
-
935
1170
pF
Reverse Transfer Capacitance
Total Gate Charge c
C rss
Q g
-
-
647
184
810
276
Gate-Source Charge c
Q gs
V GS = 10 V
V DS = 30 V, I D = 110 A
-
24.7
-
nC
Gate-Drain Charge c
Q gd
-
50.4
-
Gate Resistance
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
R g
t d(on)
t r
t d(off)
t f
f = 1 MHz
V DD = 30 V, R L = 0.27 ?
I D ? 110 A, V GEN = 10 V, R g = 2.5 ?
0.5
-
-
-
-
1.1
19
23
83
35
1.6
29
35
125
53
?
ns
Source-Drain Diode Ratings and
Characteristics b
Pulsed Current a
I SM
-
-
480
A
Forward Voltage
V SD
I F = 100 A, V GS = 0 V
-
0.9
1.5
V
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2028-Rev. C, 17-Oct-11
2
Document Number: 68866
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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